Question
Download Solution PDFThe resistivity of a uniformly doped n-type silicon sample is 0.50 Ω-cm. If the electron mobility (μn) is 1250 cm2/V-sec and the charge of an electron is 1.6 × 10-19 coulomb, the donor impurity concentration (ND) in the sample is
Answer (Detailed Solution Below)
Detailed Solution
Download Solution PDFGiven that,
n = 0.50 \(\Omega\)-cm
Electron mobility(\(\mu_n\)) = 1250 cm2/V-sec.
Electron charge(eq) = \(1.6\times 10^-19\)
ND = ?
\(\sigma = \frac{1}{e} = nq\mu n\)
\(n = N_D \frac{1}{eq\mu n}\)
= \(\frac{1}{0.5\times1.6\times10^-19\times1250}\)
= \(1\times 10\)-16 /cm3
Here, option 2 is correct.
Last updated on Jun 23, 2025
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