Temperature Effect on a Diode Current MCQ Quiz - Objective Question with Answer for Temperature Effect on a Diode Current - Download Free PDF

Last updated on Apr 4, 2025

Latest Temperature Effect on a Diode Current MCQ Objective Questions

Temperature Effect on a Diode Current Question 1:

The following table gives the forward characteristics of a Si diode. Estimate the temperature of a diode junction.(Given ln(0.2) = - 1.609)

Vf(V)

If(mA)

0.6

1

0.65

5

  1. 240 K
  2. 360 K
  3. 400 K
  4. 470 K

Answer (Detailed Solution Below)

Option 2 : 360 K

Temperature Effect on a Diode Current Question 1 Detailed Solution

Concept:

1) A diode is a two-terminal non-linear device.

2) It is passive because there is no built-in source of power.

Note: It is not an exponential device, it’s a logarithmic device.[∵ Current controlling]

The current equation is defined as:

Id=ISeVdηVt

Vd = voltage across the diode

Vt = temperature equivalent

Vt ≈ 26 mV at room temperature.

Vt=T11600inkelvin

Is = Reverse saturation current.

Vd=ηVtln(IdIS)

If ‘η’ is not given the default value will be 1

Calculation:

Given forward bias characteristics are

Vf(V)

If(mA)

0.6

1

0.65

5

 

From the current equation using  data, we get two equations

V1=ηVtln(I1IS) ⋯ (i)

V2=ηVtln(I2IS) ⋯ (ii)

Considering η = 1

V1V2=Vtln(I1IS)Vtln(I2IS)

V1V2=Vtln(I1I2)

0.60.65=T11600ln(15)

0.05=1.609×T11600

0.05×116001.609=T

T=5801.609

T = 360.47 Kelvin

T ≈ 360 Kelvin

 

Extra concept:

Diode small-signal equivalent is shown below for both ideal and practical cases.

Condition

Equivalent

V and I relation

Model

Ideal

 

1. If Vd = 0 → Id > 0

2. If Id = 0 → Vd < 0

1. Short circuit

2. open circuit

Practical

 

1. If Vd = 0.7 → I­d > 0

2. If Id = 0 → Vd < 0.7

1. Volatge source with 0.7 volts

2. open circuit

Practical

 

 

1. If Vd = 0.7 → I­d > 0

2. If Id = 0 → Vd < 0.7

1.voltage source with 0.7 volts and a series resistance of 25 Ω

2. open circuit

Top Temperature Effect on a Diode Current MCQ Objective Questions

The following table gives the forward characteristics of a Si diode. Estimate the temperature of a diode junction.(Given ln(0.2) = - 1.609)

Vf(V)

If(mA)

0.6

1

0.65

5

  1. 240 K
  2. 360 K
  3. 400 K
  4. 470 K

Answer (Detailed Solution Below)

Option 2 : 360 K

Temperature Effect on a Diode Current Question 2 Detailed Solution

Download Solution PDF

Concept:

1) A diode is a two-terminal non-linear device.

2) It is passive because there is no built-in source of power.

Note: It is not an exponential device, it’s a logarithmic device.[∵ Current controlling]

The current equation is defined as:

Id=ISeVdηVt

Vd = voltage across the diode

Vt = temperature equivalent

Vt ≈ 26 mV at room temperature.

Vt=T11600inkelvin

Is = Reverse saturation current.

Vd=ηVtln(IdIS)

If ‘η’ is not given the default value will be 1

Calculation:

Given forward bias characteristics are

Vf(V)

If(mA)

0.6

1

0.65

5

 

From the current equation using  data, we get two equations

V1=ηVtln(I1IS) ⋯ (i)

V2=ηVtln(I2IS) ⋯ (ii)

Considering η = 1

V1V2=Vtln(I1IS)Vtln(I2IS)

V1V2=Vtln(I1I2)

0.60.65=T11600ln(15)

0.05=1.609×T11600

0.05×116001.609=T

T=5801.609

T = 360.47 Kelvin

T ≈ 360 Kelvin

 

Extra concept:

Diode small-signal equivalent is shown below for both ideal and practical cases.

Condition

Equivalent

V and I relation

Model

Ideal

 

1. If Vd = 0 → Id > 0

2. If Id = 0 → Vd < 0

1. Short circuit

2. open circuit

Practical

 

1. If Vd = 0.7 → I­d > 0

2. If Id = 0 → Vd < 0.7

1. Volatge source with 0.7 volts

2. open circuit

Practical

 

 

1. If Vd = 0.7 → I­d > 0

2. If Id = 0 → Vd < 0.7

1.voltage source with 0.7 volts and a series resistance of 25 Ω

2. open circuit

Temperature Effect on a Diode Current Question 3:

The following table gives the forward characteristics of a Si diode. Estimate the temperature of a diode junction.(Given ln(0.2) = - 1.609)

Vf(V)

If(mA)

0.6

1

0.65

5

  1. 240 K
  2. 360 K
  3. 400 K
  4. 470 K

Answer (Detailed Solution Below)

Option 2 : 360 K

Temperature Effect on a Diode Current Question 3 Detailed Solution

Concept:

1) A diode is a two-terminal non-linear device.

2) It is passive because there is no built-in source of power.

Note: It is not an exponential device, it’s a logarithmic device.[∵ Current controlling]

The current equation is defined as:

Id=ISeVdηVt

Vd = voltage across the diode

Vt = temperature equivalent

Vt ≈ 26 mV at room temperature.

Vt=T11600inkelvin

Is = Reverse saturation current.

Vd=ηVtln(IdIS)

If ‘η’ is not given the default value will be 1

Calculation:

Given forward bias characteristics are

Vf(V)

If(mA)

0.6

1

0.65

5

 

From the current equation using  data, we get two equations

V1=ηVtln(I1IS) ⋯ (i)

V2=ηVtln(I2IS) ⋯ (ii)

Considering η = 1

V1V2=Vtln(I1IS)Vtln(I2IS)

V1V2=Vtln(I1I2)

0.60.65=T11600ln(15)

0.05=1.609×T11600

0.05×116001.609=T

T=5801.609

T = 360.47 Kelvin

T ≈ 360 Kelvin

 

Extra concept:

Diode small-signal equivalent is shown below for both ideal and practical cases.

Condition

Equivalent

V and I relation

Model

Ideal

 

1. If Vd = 0 → Id > 0

2. If Id = 0 → Vd < 0

1. Short circuit

2. open circuit

Practical

 

1. If Vd = 0.7 → I­d > 0

2. If Id = 0 → Vd < 0.7

1. Volatge source with 0.7 volts

2. open circuit

Practical

 

 

1. If Vd = 0.7 → I­d > 0

2. If Id = 0 → Vd < 0.7

1.voltage source with 0.7 volts and a series resistance of 25 Ω

2. open circuit

Temperature Effect on a Diode Current Question 4:

At 300K to maintain a diode current of 1 mA, a certain Ge diode requires a forward bias of 0.143V, whereas a certain Si diode requires a forward bias of 0.178V. Then the ratio of reverse saturation current in Ge to that of Si is (approximately):

Use, η = 1 for both the diodes.

  1. 3.8

  2. 3.2

  3. 14

  4. 12

Answer (Detailed Solution Below)

Option 3 :

14

Temperature Effect on a Diode Current Question 4 Detailed Solution

Concept:

The diode current equation is given by:

ID=IseVD/ηVT

η = Ideality factor (usually taken as 1)

VD = Applied bias voltage

VT = Thermal voltage

Calculation:

VGe = 0.143V

VSi = 0.178V 

I=IsGeexp(eVGekT)=IsSiexp(eVSikT)

or,IsGeIsSi=exp[e(VGeVSi)kT]

=exp[1.6×1019×(0.1430.178)1.38×1023×300]

= 0.25

Temperature Effect on a Diode Current Question 5:

The oxide capacitance Cox of a MOSCAP in depletion is Cox=0.5nF/cm2 and depletion region capacitance CDR=0.125nF/cm2. The total depletion capacitance of the MOSCAP is

  1. 1nF/cm2
  2. 0.625nF/cm2
  3. 0.1nF/cm2
  4. 0.375nF/cm2

Answer (Detailed Solution Below)

Option 3 : 0.1nF/cm2

Temperature Effect on a Diode Current Question 5 Detailed Solution

Cox and CDR are in series. Thus, the total depletion capacitance CD=CoxCDR.

CD=CoxCDRCox+CDRCD=0.5×0.1250.5+0.125nF/cm2

CD=0.1nF/cm2
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