Which of the following statements is TRUE in the case of an IGBT?

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Question

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ALP CBT 2 Electronic Mechanic Previous Paper: Held on 21 Jan 2019 Shift 1

Answer 1

IGBT:

LMRC EC 2018 50 20 Q Part 2 Hindi - Final 2

An insulated-gate bipolar transistor (IGBT) is a three-terminal power semiconductor device primarily used as an electronic switch.
It was developed to combine high efficiency and fast switching. Its on-state voltage drop is low compared to other thyristors.
It consists of four alternating layers (P-N-P-N) that are controlled by a metal–oxide semiconductor (MOS) gate structure without regenerative action.
It has very low ON-state voltage drop.

Important Points:

BJT	MOSFET	IGBT
Bipolar device	Unipolar device	Bipolar device, Three terminal device (emitter collector and gate)
Low input impedance	High input impedance	High input impedance
Current controlled device	Voltage controlled device	Voltage controlled device
Low on-state voltage drop and low conduction loss	High on-state voltage drop and higher conduction loss	Low forward voltage drop, low ON state power loss than MOSFET, low conduction loss than MOSFET
Secondary breakdown occurs	Free from the secondary breakdown	Secondary breakdown does not occur
Negative temperature coefficient	Positive temperature coefficient	Positive temperature coefficient
Not advisable for parallel operation	advisable for parallel operation	Used for parallel operation
Lower operating frequency(10kHz)	higher operating frequency(100kHz)
On state in the saturation region	On state in the ohmic region
Controlled turn on and turn off device	Control turn on and turn off device	Controlled turn on and turn off device
Turn on and turn off time depend on junction capacitance	Smaller turn off time
Controlled signal requirement continuously	Controlled signal requirement continuously	Controlled signal requirement continuously