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An SCR is a device having

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PSPCL JE EE 2015 Previous Year Paper
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  1. Three layers with four junctions
  2. Three layers with two junctions
  3. Four layers with three junctions
  4. Four layers with four junctions

Answer (Detailed Solution Below)

Option 3 : Four layers with three junctions
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Detailed Solution

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The silicon control rectifier (SCR) consists of four layers of semiconductors, which form NPNP or PNPN structures, having three P-N junctions labeled J1, J2 and J3, and three terminals.

F1 U.B Madhu 29.01.20 D10

The anode terminal of an SCR is connected to the p-type material of a PNPN structure, and the cathode terminal is connected to the n-type layer, while the gate of the SCR is connected to the p-type material nearest to the cathode.
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More Thyristors Questions

Q1.In a thyristor _________ is the time required for the forward blocking voltage to fall from 10% of an anode voltage to the on-state voltage drop of the device.
Q2.If the latching current of a thyristor is 4 mA and it is connected in series with a purely inductive load of 0.2 H across a DC voltage of 200 V. What should be the minimum width of the pulse to properly turn on the thyristor?
Q3.The voltage applied to the gate terminal of a thyristor is a rectangular pulse of 12 V with a period of 50 us and a duty cycle of 0.2. What is the average power loss in the gate circuit, if the peak gate power loss is 5 W?
Q4.False turn-on of a thyristor by large \(\rm \frac{dv}{dt}\) can be prevented by using a _________ circuit in _________ with the device.
Q5.Which of the following statements is INCORRECT for SCR? 
Q6.An SCR can be turned off by reducing its forward current below:
Q7. For the SCR shown, if a forward voltage is applied to the anode and cathode, with the gate open, then which of the following is true?
Q8.Which of the following methods of turning on of a thyristor may lead to the destruction of the thyristor?
Q9.The terminals of TRIAC are named as MT1, MT2 and G. What does 'MT' stand for?
Q10.Find the average gate power dissipation (Pgav) when the maximum allowable gate power dissipation is (Pgm) = 10 kW with a duty cycle = 50 %.
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More Power Electronics and Drives Questions

Q1.Which of the following is a characteristic of a group drive system?
Q2.Which control method enables four-quadrant operation of induction motors?
Q3.In a thyristor _________ is the time required for the forward blocking voltage to fall from 10% of an anode voltage to the on-state voltage drop of the device.
Q4.If the latching current of a thyristor is 4 mA and it is connected in series with a purely inductive load of 0.2 H across a DC voltage of 200 V. What should be the minimum width of the pulse to properly turn on the thyristor?
Q5.A fully controlled single-phase bridge rectifier is feeding a highly inductive load such that the load current is continuous. If the firing angle is set at 120°, then the average load voltage is ________ and the load current is ________.
Q6.The voltage applied to the gate terminal of a thyristor is a rectangular pulse of 12 V with a period of 50 us and a duty cycle of 0.2. What is the average power loss in the gate circuit, if the peak gate power loss is 5 W?
Q7.In which type of forced commutation method is the thyristor self-commutated by an LC circuit?
Q8.Which of the following devices can withstand bipolar voltages?
Q9.False turn-on of a thyristor by large \(\rm \frac{dv}{dt}\) can be prevented by using a _________ circuit in _________ with the device.
Q10.Which of the following is NOT valid as far as alternative names used for IGBT are concerned?
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