In an extrinsic semiconductor, the conductivity significantly depends on:

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  1. Majority charge carriers generated due to impurity doping
  2. Minority charge carriers are generated due to thermal agitation.
  3. Majority charge carriers are generated due to thermal agitation.
  4. Minority charge carriers generated due to impurity doping.

Answer (Detailed Solution Below)

Option 1 : Majority charge carriers generated due to impurity doping
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Detailed Solution

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Concept:

F1 S.B 25.8.20 Pallavi D2

Conductivity (σ) for p-type material is:

σ = NA q μp

Where NA = Acceptor doping concentration (/cm3)

q = charge of e- = 1.6 × 10-19 C

μp = Mobility of holes (majority carrier in p-type)

Conductivity (σ) for n-type material is:

σ = ND q μn

Where, ND = Donor doping concentration (cm-3)

v = charge of e- = 1.6 × 10-19 C

μn = Mobility of electron (majority charge carries in n-type)

Clearly, conductivity significantly depends on majority charge carriers generated due to impurity doping.

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