If N is the doping level of substrate and V is the effective voltage across the junction in a MOSFET, then the depletion region width for the junction is given by:

This question was previously asked in
UGC NET Paper 2: Electronic Science 29 Oct 2022 Shift 1
View all UGC NET Papers >

Answer (Detailed Solution Below)

Option 1 :
Free
UGC NET Paper 1: Held on 21st August 2024 Shift 1
50 Qs. 100 Marks 60 Mins

Detailed Solution

Download Solution PDF

 The Depletion region width of MOSFET is given by:

  

Where v is applied potential

q=  electron charge

N =Doping Concentration

 is the permittivity of materials

Latest UGC NET Updates

Last updated on Jul 4, 2025

-> The UGC NET Response Sheet will be available soon on the official website.

-> The UGC NET June 2025 exam will be conducted from 25th to 29th June 2025.

-> The UGC-NET exam takes place for 85 subjects, to determine the eligibility for 'Junior Research Fellowship’ and ‘Assistant Professor’ posts, as well as for PhD. admissions.

-> The exam is conducted bi-annually - in June and December cycles.

-> The exam comprises two papers - Paper I and Paper II. Paper I consists of 50 questions and Paper II consists of 100 questions. 

-> The candidates who are preparing for the exam can check the UGC NET Previous Year Papers and UGC NET Test Series to boost their preparations.

More MOSFET Questions

Hot Links: teen patti go teen patti real cash withdrawal teen patti vip