Question
Download Solution PDFIf N is the doping level of substrate and V is the effective voltage across the junction in a MOSFET, then the depletion region width for the junction is given by:
Answer (Detailed Solution Below)
Detailed Solution
Download Solution PDFThe Depletion region width of MOSFET is given by:
\(W=\sqrt { \frac {2\epsilon_{si} \epsilon_0V}{qN}}\)
Where v is applied potential
q= electron charge
N =Doping Concentration
\(\epsilon \) is the permittivity of materials
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