Space Charge Region MCQ Quiz in मल्याळम - Objective Question with Answer for Space Charge Region - സൗജന്യ PDF ഡൗൺലോഡ് ചെയ്യുക
Last updated on Apr 17, 2025
Latest Space Charge Region MCQ Objective Questions
Top Space Charge Region MCQ Objective Questions
Space Charge Region Question 1:
A silicon PN junction at T = 300 K with a p-type doping concentration of
Given,
Answer (Detailed Solution Below) 1 - 1.3
Space Charge Region Question 1 Detailed Solution
The maximum electric field is given by
Now,
So, we may approximate
Space Charge Region Question 2:
Comprehension:
Common Data for Questions 19 and 20 :
Consider a silicon p – n junction at room temperature having the following parameters :
Doping of the n – side = 1 × 1017 cm-3
Depletion width on the n – side = 0.1 μm
Depletion width on the p – side = 1.0 μm
Intrinsic carrier concentration = 1.4 × 1010 cm-3
Thermal voltage = 26 mV
Permittivity of free space = 8.85 × 10-14F ⋅ cm-1
Dielectric constant of silicon = 12
The peak electric field in the device is:
Answer (Detailed Solution Below)
0.15 MV. cm-1, directed from n-region to p – region
Space Charge Region Question 2 Detailed Solution
The direction of electric field in a PN junction is always from N side to P side.
Space Charge Region Question 3:
Comprehension:
Common Data for Questions 19 and 20 :
Consider a silicon p – n junction at room temperature having the following parameters :
Doping of the n – side = 1 × 1017 cm-3
Depletion width on the n – side = 0.1 μm
Depletion width on the p – side = 1.0 μm
Intrinsic carrier concentration = 1.4 × 1010 cm-3
Thermal voltage = 26 mV
Permittivity of free space = 8.85 × 10-14F ⋅ cm-1
Dielectric constant of silicon = 12
The built–in potential of the junction
Answer (Detailed Solution Below)
Space Charge Region Question 3 Detailed Solution
From charge neutrality we have,
or,
or,
∴
∴
= 0.761 V